Stacked substrate manufacturing method, stacked substrate manufacturing apparatus, stacked substrate manufacturing system, and substrate processing apparatus

ABSTRACT

A method of manufacturing a stacked substrate by bonding a first substrate and a second substrate, including a step of determining, based on information about curving of each of the first substrate and the second substrate, whether or not the first substrate and the second substrate satisfy a predetermined condition, and, a step of bonding the first substrate and the second substrate if the predetermined condition is satisfied. The stacked substrate manufacturing method described above includes a step of estimating, based on the information, an amount of misalignment which occurs after the first substrate is bonded to the second substrate and the predetermined condition may include that the amount of misalignment is equal to or less than a threshold.

The contents of the following International and Japanese patentapplication(s) are incorporated herein by reference:

-   NO. 2016-138029 filed in Japan on Jul. 12, 2016, and-   NO. PCT/JP2017/023942 filed on Jun. 29, 2017.

BACKGROUND 1. Technical Field

The present invention relates to a stacked substrate manufacturingmethod, a stacked substrate manufacturing apparatus, a stacked substratemanufacturing system, and a substrate processing apparatus.

2. Related Art

There is a method for manufacturing a stacked substrate by stacking twosubstrates (see, for example, Patent document 1).

-   Patent document 1: Japanese Patent Application Publication No.    2013-098186

Even if the two substrates are aligned before overlaying the twosubstrates, a misalignment between the substrates sometimes occurs.

SUMMARY

A first aspect of the present invention provides a method ofmanufacturing a stacked substrate by bonding a first substrate and asecond substrate, wherein the stacked substrate manufacturing methodincludes a step of determining whether or not the first substrate andthe second substrate satisfy a predetermined condition based oninformation about curving of each of the first substrate and the secondsubstrate, and, if the predetermined condition is satisfied, a step ofbonding the first substrate and the second substrate.

A second aspect of the present invention provides an apparatus tomanufacture a stacked substrate by bonding a first substrate and asecond substrate, wherein the stacked substrate manufacturing apparatusincludes a bonding unit which bonds the first substrate and the secondsubstrate which are determined to satisfy a predetermined conditionbased on information about the curving of each of the first substrateand the second substrate.

A third aspect of the present invention provides a stacked substratemanufacturing system including a substrate processing apparatus whichprocesses a first substrate and a second substrate, and a bondingapparatus which bonds the first substrate and the second substrate whichhave been processed in the substrate processing apparatus, wherein thesubstrate processing apparatus includes an obtaining unit which obtainsinformation about curving of each of the first substrate and the secondsubstrate, a determining unit which determines whether or not the firstsubstrate and the second substrate satisfy a predetermined conditionbased on the information, and controlling unit which outputs to thebonding apparatus an indication signal to bond the first substrate andthe second substrate if the predetermined condition is satisfied.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic view of the stacked substrate manufacturingapparatus 100.

FIG. 2 shows a schematic plan view of the substrate 210.

FIG. 3 shows a flow diagram showing a procedure to overlay the substrate210.

FIG. 4 shows a schematic cross sectional view of the substrate holder223 retaining the substrate 211.

FIG. 5 shows a schematic cross sectional view of the overlaying unit300.

FIG. 6 shows a schematic cross sectional view of the overlaying unit300.

FIG. 7 shows a schematic cross sectional view of the overlaying unit300.

FIG. 8 show a schematic cross sectional view of the overlaying unit 300.

FIG. 9 shows a schematic cross sectional view of the overlaying unit300.

FIG. 10 shows a partially enlarged view showing an overlaying process ofthe substrates 211 and 213.

FIG. 11 shows a partially enlarged view showing an overlaying process ofthe substrates 211 and 213.

FIG. 12 shows a partially enlarged view showing an overlaying process ofthe substrates 211 and 213.

FIG. 13 shows a schematic view showing deviation amounts at variousportions in the substrate 211.

FIG. 14 shows a flow diagram showing a procedure to determine acombination of the substrate 210.

FIG. 15 shows a flow diagram showing a procedure to determine acombination of the substrate 210.

FIG. 16 shows a schematic view describing a method of determining acombination of the substrate 210.

FIG. 17 shows a flow diagram showing a procedure to determine acombination of the substrate 210.

FIG. 18 shows a schematic cross sectional view of the substrate holder221 retaining the substrate 211.

FIG. 19 shows a schematic cross sectional view of the correcting unit601.

FIG. 20 shows a schematic view showing a layout of the actuator 412.

FIG. 21 shows a schematic view showing an operation of the correctingunit 601.

FIG. 22 shows a partially enlarged view showing an overlaying process ofthe substrates 211 and 213.

FIG. 23 shows a schematic view describing an operation of the correctingunit 602.

FIG. 24 shows a schematic cross sectional view of the correcting unit602.

FIG. 25 shows a schematic cross sectional view of the correcting unit603.

FIG. 26 shows a schematic plan view of the correcting unit 603.

FIG. 27 shows a schematic view describing an operation of the correctingunit 603.

FIG. 28 shows a flow diagram showing a procedure to determine acombination of the substrate 210.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

In the following, embodiments of the present invention are described.The embodiments do not limit the invention according to the claims. Allthe combinations of the features described in the embodiments are notnecessarily essential to means provided by aspects of the invention.

FIG. 1 shows a schematic plan view of the stacked substratemanufacturing apparatus 100. The stacked substrate manufacturingapparatus 100 includes a housing 110, a substrate cassette 120 toaccommodate substrates 210 to be overlaid, a substrate cassette 130 toaccommodate a stacked substrate 230 fabricated by overlaying thesubstrates 210, a controlling unit 150, a conveying unit 140, aoverlaying unit 300, a holder stocker 400 to accommodate a substrateholder 220 to retain the substrates 210, and a prealigner 500. Thetemperature within the housing 110 is controlled and kept, for example,at room temperature.

The conveying unit 140 carries the single substrate 210, the substrateholder 220, the substrate holder 220 retaining the substrate 210, thestacked substrate 230 fabricated by stacking a plurality of substrates210, and the like. The controlling unit 150 comprehensively controlseach portion of the stacked substrate manufacturing apparatus 100 bymaking them cooperate with each other. Also, the controlling unit 150receives a user instruction from the outside and sets a manufacturingcondition to manufacture the stacked substrate 230. Further, thecontrolling unit 150 has a user interface for displaying, to theoutside, the operating state of the stacked substrate manufacturingapparatus 100.

The overlaying unit 300 has a pair of opposing stages, each of whichretains the substrate 210, and fabricates the stacked substrate 230 byaligning the substrates 210 retained on the stages with each other andthen making them contact with each other so that they are overlaid.

The prealigner 500 aligns the substrate 210 and the substrate holder 220and causes the substrate holder 220 to retain the substrate 210. Thesubstrate holder 220 is made from hard material such as aluminum oxideceramic, and attracts to and retains the substrate 210 throughelectrostatic chuck, vacuum chuck, and the like.

In the stacked substrate manufacturing apparatus 100 described above, inaddition to the substrate 210 on which elements, circuits, terminals andthe like are formed, an untreated silicon wafer, an SiGe substrate towhich Ge is added, a monocrystalline Ge substrate, a III-V or II-VIgroup compound semiconductor wafer and the like, glass substrate, andthe like can be joined. The objects to be joined may be a circuitsubstrate and an untreated substrate, or may be untreated substrates.The substrate 210 to be joined may be itself the stacked substrate 230having a plurality of substrates which have already been stacked.

FIG. 2 shows a schematic plan view of the substrate 210 to be overlaidin the stacked substrate manufacturing apparatus 100. The substrate 210has a notch 214, a plurality of circuit regions 216, and a plurality ofalignment marks 218.

On the front surface of the substrate 210, the circuit regions 216 areplaced periodically in the surface direction of the substrate 210. Eachof the circuit regions 216 is provided with structural bodies, such aswiring and overcoat, formed by photolithographic technique and the like.On the circuit regions 216, connection portions such as pads and bumpsare also placed, which act as connection terminals when the substrate210 is electrically connected to another substrate 210, a lead frame,and the like. The connection portions are also an example of thestructural bodies formed on the front surface of the substrate 210.

The alignment marks 218 are an example of the structural bodies formedon the front surface of the substrate 210, and are placed on scribelines 212 placed between the circuit regions 216. The alignment marks218 are the markers for aligning a substrate 210 to another substrate210.

FIG. 3 is a flow diagram showing a procedure to fabricate the stackedsubstrate 230 by stacking the two substrates 210 in the stackedsubstrate manufacturing apparatus 100. First, among the plurality ofsubstrates 210, a combination of the substrates 211 and 213, which areto be overlaid and joined with each other, is determined (step S101).There are a plurality of examples for the method of determining thecombination of the substrates 211 and 213. These will be described inreference with FIG. 14 and the subsequent figures after describing aprocedure to overlay the substrates 210.

Then, in the prealigner 500, the substrates 211 and 213 to be overlaidare retained in the substrate holders 221 and 223, respectively (stepS102). Then, as shown in FIG. 5 , the substrate holders 221 and 223retaining the substrates 211 and 213 individually are sequentiallyimported into the overlaying unit 300 (step S103). In the example shownin FIG. 4 , the substrate holder 223 has a flat and smooth retainingsurface 225.

The overlaying unit 300 includes a frame 310, an upper stage 322, and alower stage 332. The upper stage 322 is fixed to a ceiling plate 316 ofthe frame 310 in the downward direction. The upper stage 322 has aretaining feature such as a vacuum chuck and an electrostatic chuck.

It is noted that, in the illustrated state, the substrate 213 retainedon the substrate holder 223 having a flat retaining surface 225 isretained on the upper stage 322 located at the upper side in the figure,while the substrate holder 221 having a curved retaining surface 225 isretained on the lower stage 332 located at the lower side in the figure.However, the combinations of the upper stage 322 and the lower stage332, and the substrate holders 221 and 223 are not limited thereto.Also, the flat substrate holder 223 or the substrate holder 221 with thecurved retaining surface may be imported onto both of the upper stage322 and the lower stage 332.

On the ceiling plate 316, the microscope 324 and the activationapparatus 326 are fixed beside the upper stage 322. The microscope 324can observe the upper surface of the substrate 211 retained on the lowerstage 332. The activation apparatus 326 generates plasma to clean theupper surface of the substrate 211 retained on the lower stage 332.

The lower stage 332 is mounted onto the upper surface, in the figure, ofthe Y-direction driving unit 333 stacked on the X-direction driving unit331 placed on the base plate 312 of the frame 310. The X-directiondriving unit 331 moves in the direction indicated with the arrow X inthe figure, in parallel with the base plate 312. The Y-direction drivingunit 333 moves on the X-direction driving unit 331 in the directionindicated with the arrow Y in the figure, in parallel with the baseplate 312. The lower stage 332 moves in two dimensions in parallel tobase plate 312 by combining the operation of the X-direction drivingunit 331 and the Y-direction driving unit 333.

Also, the lower stage 332 is supported by the lift driving unit 338which moves up and down in the direction indicated with the arrow Z,which is vertical to the base plate 312. Thus, the lower stage 332 canmove up and down relative to the Y-direction driving unit 333.

The moving amounts of the lower stage 332 moved by the X-directiondriving unit 331, the Y-direction driving unit 333 and the lift drivingunit 338 are precisely measured by using an interferometer and the like.

On the Y-direction driving unit 333, the microscope 334 and theactivation apparatus 336 are each mounted beside the lower stage 332.The microscope 334 can observe the lower surface of the substrate 213retained on the upper stage 322 in the downward direction. Theactivation apparatuses 336 generate plasma to clean the lower surface ofthe substrate 213 retained on the upper stage 322. It is noted thatthese activation apparatus 326 and 336 may be provided on the apparatusother than the overlaying unit 300 and a robot may carry the substratewith the activated upper surface and the substrate holder into theoverlaying unit 300 from the activation apparatus 326 and 336.

It is noted that the overlaying unit 300 may further include a rotationdriving unit to rotate the lower stage 332 around the axis of rotationwhich is vertical to the base plate 312, and an swing driving unit toswing the lower stage 332. Thus, the alignment precision of thesubstrates 211 and 213 can be improved by rotating the substrate 211retained on the lower stage 332 as well as making the lower stage 332 inparallel with the upper stage 322.

The controlling unit 150 calibrates the microscope 324 and 334 bycausing them to observe the same markers or adjusting the focal pointswith each other. Thus, the relative positions of a pair of themicroscope 324 and 334 in the overlaying unit 300 are measured.

Following the state shown in FIG. 5 , as shown in FIG. 6 (step S104 inFIG. 3 ), the controlling unit 150 operates the X-direction driving unit331 and the Y-direction driving unit 333 to enable the microscope 324and 334 to detect the alignment marks 218 which are provided on each ofthe substrates 211 and 213.

Thus, the relative positions of the substrates 211 and 213 can belearned by detecting the positions of the alignment marks 218 of thesubstrates 211 and 213 using the microscopes 324 and 334 whose relativepositions are known (step S105). Therefore, when the substrates 211 and213 are aligned, the relative moving amounts of the substrates 211 and213 may be calculated such that the misalignment between thecorresponding alignment marks 218 of the substrates 211 and 213 is equalto or less than a threshold, or the misalignment between thecorresponding circuit regions 216 or the connection portions of thesubstrates 211 and 213 is equal to or less than a threshold. Themisalignment refers to the misalignment between the correspondingalignment marks 218 of the stacked substrates 211 and 213, and to themisalignment between the corresponding connection portions, and includesthe misalignment due to the difference in amount of distortion whichoccurs in each of the two substrates 211 and 213. The distortion will bedescribed below.

Following the state shown in FIG. 6 , the controlling unit 150 recordsthe relative positions of a pair of the substrates 211 and 213 andchemically activates the joined surface of each of the pair of thesubstrates 211 and 213, as shown in FIG. 7 (step S106 in FIG. 3 ). Thecontrolling unit 150 first resets the position of the lower stage 332 tothe initial position, and then move it horizontally to scan the frontsurface of the substrates 211 and 213 using plasma generated by theactivation apparatus 326 and 336. Thus, each front surface of thesubstrates 211 and 213 are cleaned, and the chemical activity isincreased.

In addition to the plasma exposure method, the front surfaces of thesubstrates 211 and 213 can also be activated by sputter etching usinginert gas, ion beam, high speed atom beam, or the like. When ion beam orhigh speed atom beam is used, the overlaying unit 300 can be generatedunder a reduced pressure. Still further, the substrates 211 and 213 canalso be activated by ultraviolet radiation, ozone asher, and the like.Further, for example, they can also be activated by chemically cleaningthe front surface of the substrates 211 and 213 using liquid or gasetchant. Also, the front surface of the substrates 211 and 213 can behydrophilized using a hydrophilizing apparatus after the front surfaceof the substrate 210 is activated.

Following the state shown in FIG. 7 , the controlling unit 150 alignsthe substrates 211 and 213 with each other, as shown in FIG. 8 (stepS107 in FIG. 3 ). Based on the relative positions of the microscope 324and 334 which are initially detected and the positions of the alignmentmarks 218 of the substrates 211 and 213 which are detected in step S104,the controlling unit 150 first moves the lower stage 332 in such amanner that the positions of the circuit regions 216, which arecorresponding to each other, in the substrates 211 and 213 are aligned.

Following the state shown in FIG. 8 , as shown in FIG. 9 , thecontrolling unit 150 operates the lift driving unit 338 to raise thelower stage 332, and makes the substrates 211 and 213 contact with eachother. Thus, portions of the substrates 211 and 213 contact with eachother and are joined (step S108).

Because the front surfaces of the substrates 211 and 213 are activated,the adjacent regions are autonomously attracted and joined with eachother due to the intermolecular force between the substrates 211 and 213once the portions of them contact with each other. Therefore, the regionwhere the substrates 211 and 213 are joined are sequentially spread fromthe contacting portion to the adjacent region, for example, by releasingthe substrate 213 retained on the substrate holder 223, which isretained on the upper stage 322. Thus, a bonding wave is generated inwhich the contacting regions sequentially spread, and the joining of thesubstrates 211 and 213 proceeds. The substrates 211 and 213 finallycontact with each other and are joined across the entire surface (stepS108). Thus, the substrates 211 and 213 form the stacked substrate 230.

It is noted that, during the above-described process in which thecontact regions of the substrates 211 and 213 spread, the controllingunit 150 may release the substrate 213 retained by the substrate holder223. The controlling unit 150 may alternatively release the substrateholder 223 retained by the upper stage 322.

Further, the controlling unit 150 may facilitate the joining of thesubstrates 211 and 213 by releasing the substrate 211 on the lower stage332 without releasing the substrate 213 on the upper stage 322, or mayrelease both of the two substrates 211 and 213. Further, the controllingunit 150 may join the substrates 211 and 213 by bringing the upper stage322 and the lower stage 332 further closer with both the substrates 213and 211 retained on the upper stage 322 and the lower stage 332.

The stacked substrate 230 fabricated in this way is exported from theoverlaying unit 300 along with the substrate holder 221 by the conveyingunit 140 (step S109). Then, the stacked substrate 230 and the substrateholder 221 are separated at the prealigner 500, and the stackedsubstrate 230 is carried to the substrate cassette 130.

If the amounts of distortions occurring in the two substrates 210 aredifferent from each other, the relative moving amount and the relativerotating amount in which the amount of misalignment between thesubstrates 211 and 213 is equal to or less than the threshold cannot becalculated even when the overlaying unit 300 aligns them in the surfacedirection of the substrate 210 based on the alignment mark 218 and thelike. Therefore, it is possible that the misalignment between thesubstrates 211 and 213 cannot be eliminated. Thus, in step S101 shown inFIG. 3 , the combination of the substrates 211 and 213 to be overlaid isdetermined in such a manner that misalignment due to the difference infinal magnification ratio caused by bonding of the substrates 211 and213 with each other is equal to or less than the threshold.

Here, the distortion occurring in the substrate 211 (213) is thedisplacement of a structural body on the substrate 211 (213) from thedesign coordinate, i.e. the design position. The distortion occurring inthe substrate 211 (213) includes two-dimension distortion andthree-dimension distortion.

The two-dimension distortion is a distortion occurring in the directionalong the joined surface of the substrates 211 and 213, and includeslinear distortion, in which the displaced positions relative to thedesign positions of the structural bodies in each of the substrates 211and 213 are represented by linear transformation, and nonlineardistortion, which cannot be represented by linear transformation and isnot the linear distortion.

The linear distortion includes a magnification ratio in whichdisplacement amount increases from the center along the radialdirection, at a constant increase rate. The magnification ratio is avalue which is obtained by dividing the amount of deviation from adesigned value at a distance of X from the center of the substrates 211and 213, by X, and whose unit is ppm. The magnification ratio includesisotropic magnification ratio, in which the displacement vector from thedesign position has the X component and Y component of the same amount,and the anisotropic magnification ratio, in which the displacementvector from the design position has components of different amounts.

In this implementation, the design positions of the structural bodies inthe two substrates 211 and 213 to be bonded are the same, and thedifference in magnification ratio relative to the design positions ofthe two substrates 211 and 213 is the amount of misalignment between thetwo substrates 211 and 213.

Also, the linear distortion includes orthogonal distortion. Theorthogonal distortion is, assuming an X-axis and a Y-axis orthogonal toeach other and an origin at the center of the substrate, a distortion ofdisplacement of the structural body in the direction parallel to theX-axis from the design position, and the amount of the distortionincreases as the structural body is farther from the origin in thedirection of the Y-axis. The displacement amount is the same in each ofa plurality of regions which cross the Y-axis in the direction parallelto the X-axis and the absolute value of the displacement amountincreases as it is farther from the X-axis. Furthermore, in theorthogonal distortion, the direction of the displacement at the positiveside of the Y-axis and the direction of the displacement at the negativeside of the Y-axis are opposite with each other.

The three-dimension distortion of the substrates 211 and 213 is thedisplacement in the direction other than the direction which is alongthe joined surface of the substrates 211 and 213, i.e. in the directionintersecting the joined surface. The three-dimension distortion includescurving which occurs entirely or partly on the substrates 211 and 213due to entire or partial bending of the substrates 211 and 213. Here,“bending of the substrate” means that the substrates 211 and 213 changetheir shape in such a manner that the resulting front surfaces of thesubstrates 211 and 213 includes points which do not exist in the planedetermined by three points on the original substrates 211 and 213.

Also, the curving is a distortion in which the front surface of thesubstrate forms curved surface, and includes, for example, a warpage anda deflection of the substrates 211 and 213. In this implementation, thewarpage refers to the distortion remained in the substrates 211 and 213in the state in which the effect of the gravity is eliminated. Thedeflection is distortion of the substrates 211 and 213 obtained byadding the effect of the gravity to the warpage. It is noted that thewarpage of the substrates 211 and 213 includes a global warpage, inwhich the substrates 211 and 213 entirely bend at a generally uniformcurvature, and a local warpage, in which a portion of the substrates 211and 213 shows a local changes in curvature.

Here, the magnification ratio is classified into an initialmagnification ratio, a flattening magnification ratio, and a joiningprocess magnification ratio, depending on the cause of occurrence.

The initial magnification ratio occurs as a deviation from the designspecification of the substrates 211 and 213 before overlaying thesubstrates 211 and 213, resulting from the stress occurring in theprocess of fabricating the alignment marks 218 and the circuit regions216 and the like on the substrates 211 and 213, the anisotropy due tothe crystalline orientation of the substrates 211 and 213, the periodicchange in the stiffness due to the arrangement of the scribe lines 212,the circuit region 216 and the like, and the like. Therefore, theinitial magnification ratio of the substrates 211 and 213 can be knownbefore starting the stacking of the substrates 211 and 213. For example,the controlling unit 150 may obtain information about the initialmagnification ratio from the processing equipment which has manufacturedthe substrates 211 and 213.

The flattening magnification ratio corresponds to the change in themagnification ratio occurring when the substrates 211 and 213 in whichdistortion such as warpage has occurred are flattened through joining orattracting to a flat retaining member. The substrate 210 in which awarpage has occurred becomes flat along the shape of the retainingsurface 225 when the substrate 210 is attracted to and retained on theflat substrate holder 223 shown, for example, in FIG. 4 . Here, when thesubstrate 210 changes from the warped state to the flat state, thedistortion amount in the substrate 210 changes in comparison to thatbefore the retention.

Thus, the amount of misalignment of the circuit regions 216 on the frontsurface of the substrate 210 relative to the design specificationchanges in comparison to that before retention. The change in thedistortion amount of the substrate 210 varies depending on the structureof the structural bodies, such as the circuit regions 216, fabricated onthe substrate 210, the process to fabricate the structural bodies, themagnitude of the warpage of the substrate 210 before the retention, andthe like. As in the case of the joining process magnification ratio, ifdistortions such as a warpage occurred in the substrates 211 and 213,the magnitude of the flattening magnification ratio can be calculatedfrom the distortion state including the warpage amount, the warpageshape and the like of the substrates 211 and 213 by checking thecorrelation between the distortion and the magnification ratio inadvance.

The joining process magnification ratio is a newly occurring change inthe magnification ratio due to the distortion which occurs in thesubstrates 211 and 213 in the process of joining. FIG. 10 , FIG. 11 ,FIG. 12 , and FIG. 13 describe the joining process magnification ratio.FIGS. 10, 11, and 12 show an enlarged region Q near the boundary Kbetween the contact region, where the substrates 211 and 213 contactwith each other, and the non-contact region, where the substrates 211and 213 do not contact with and are apart from each other and are to beoverlaid, in the substrates 211 and 213 in the process of joining in theoverlaying unit 300.

As shown in FIG. 10 , as the area of the contact region in which thesubstrates 211 and 213 are overlaid expands from the center towards theperimeter, the boundary K moves from the center side of the substrates211 and 213 toward the perimeter side. In the vicinity of the boundaryK, an expansion occurs in the substrate 213 which is released fromretention by the substrate holder 223. Specifically, on the boundary K,the substrate 213 expands on the lower surface side of the substrate 213in the figure, while the substrate 213 contracts on the upper surfaceside in the figure, relative to the center plane of the substrate 213 inthe thickness direction.

Thus, as shown with the dotted lines in the figure, in the substrate213, a distortion occurs at the outer edge of the region joined to thesubstrate 211, as though the magnification ratio on the front surface ofthe substrate 213 relative to the design specification of the circuitregions 216 enlarges relative to the substrate 211. Therefore, as shownas a deviation of the dotted lines in the figure, a misalignment occursbetween the lower substrate 211 retained on the substrate holder 222 andthe upper substrate 213 released from the substrate holder 223, due tothe expanding amount of the substrate 213, i.e. difference inmagnification ratio.

Further, as shown in FIG. 11 , when the substrates 211 and 213 contactand are joined with each other in the above-described state, theenlarged magnification ratio of the substrate 213 is fixed. Further, asshown in FIG. 12 , the expansion amount of the substrate 213 fixed byjoining is accumulated as the boundary K moves toward the perimeter ofthe substrates 211 and 213.

The amount of the joining process magnification ratio as described abovecan be calculated based on physical quantities such as the stiffness ofthe substrates 211 and 213 to be overlaid and the viscosity ofatmosphere caught between the substrates 211 and 213. Also, thedeviation amount generated after the overlaying of the substratesmanufactured in the same lot as the substrates 211 and 213 to beoverlaid may be measured and recorded in advance and the controllingunit 150 may obtain the recorded measurement value as the informationabout the joining process magnification ratio occurring by the joiningof the substrates 211 and 213 in the lot.

FIG. 13 shows the distribution of misalignments due to the magnificationratio difference between the two substrates 211 and 213 which constitutethe stacked substrate 230. The illustrated deviations have deviationamounts which gradually increase radially from the center point of thestacked substrate 230 in the surface direction. It is noted that theillustrated magnification ratio includes the initial magnification ratioand the flattening magnification ratio which occurred before the overlayof the substrates 211 and 213, and the joining process magnificationratio which occurs in the process of overlaying the substrates 211 and213.

It is noted that when the substrates 211 and 213 are joined, while onesubstrate, for example substrate 211, is retained, the other substrate213 is released. Therefore, at a point of time at which the substrates211 and 213 are joined, the released substrate 213 is distorted as it isjoined, while the shape of the retained substrate 211 is fixed.Therefore, the joining process magnification ratio does not have to beconsidered for the substrate 211 which is fixed as it is joined, whilethe joining process magnification ratio is preferably considered for thesubstrate 213 to be released.

When the fixed substrate 211 is retained in a distorted state due to theshape of the substrate holder 221 and the like, both of the joiningprocess magnification ratio and the flattening magnification ratio arepreferably considered for the released substrate 213. Further, when thesubstrate 213 has a distortion such as warpage, the joining processmagnification ratio and the flattening magnification ratio to which thisdistortion is added are preferably considered.

In this way, the final magnification ratio difference after theoverlaying of the substrates 211 and 213 is formed by adding thedifference in flattening magnification ratio occurring when thesubstrates 211 and 213 are retained on the substrate holders 221 and 223and the like, and the joining process magnification ratio of thesubstrate 213 released from retention in the process of joining, to thedifference in initial magnification ratio which the substrates 211 and213 initially have.

As described above, the misalignment in the stacked substrate 230fabricated by stacking the substrates 211 and 213 is correlated with theinitial magnification ratio difference, the flattening magnificationratio difference, and the magnitude of the joining process magnificationratio. Also, the magnification ratio occurring in the substrates 211 and213 is correlated with the distortion such as warpage in the substrate.

Further, these initial magnification ratio difference, flatteningmagnification ratio difference, and joining process magnification ratiocan be estimated by a measurement, calculation, and the like beforejoining as described above. Therefore, by determining, before joining, acombination of substrates 211 and 213 to be joined based on theestimated magnification ratios for the substrates 211 and 213 anddealing with it, an excessive misalignment can be suppressed in thestacked substrate 230 manufactured by bonding.

FIG. 14 shows contents of procedure to determine a combination ofsubstrates 211 and 213 to be overlaid in the step S101 shown in FIG. 3 .

When a combination of the substrates 211 and 213 to be overlaid isdetermined, the controlling unit 150 in the stacked substratemanufacturing apparatus 100 first collects information about curving ineach of the substrates 211 and 213, for a group of substrates 211 and213 such as a plurality of substrates 210 belonging to one substratecassette 120 or the same lot (step S201).

The controlling unit 150 forms an obtaining unit to obtain informationabout curving including the warpage of the substrates 211 and 213 to beoverlaid.

The information about the curving of the substrates 211 and 213 includesinformation which can be obtained by measuring the substrate 210, suchas the magnitude and direction of a warpage, a portion of warpage, theinternal stress and, and the like of the substrates 211 and 213,information about a cause generating warpages in the substrates 211 and213, and information such as the magnitude and direction of the warpagein the substrates 211 and 213, which are estimated from the cause.

When measuring warpages in the substrates 211 and 213, the front surfaceor back surface of the substrates 211 and 213 is observed with anon-contact distance sensor such as a microscope provided on, forexample, the overlaying unit 300 while the substrates 211 and 213 aresupported at the center in the surface direction and are rotated aroundthe center, and the position of the front surface or the back surface ismeasured based on the distribution of the distance information obtainedwith an automatic focusing feature included in the optics in themicroscope.

Thus, the magnitude, direction, and the like of the deflection on thesubstrates 211 and 213 can be measured. The magnitude and direction ofdeflections in the substrates 211 and 213 are obtained fromdisplacements at a plurality of positions in the front surface or backsurface in the thickness direction of the substrates 211 and 213relative to the supported center as a reference. In this implementation,the average value of the displacements in a plurality of positions ineach of the substrates 211 and 213 is the magnitude of the globalwarpage. The difference between the deflection and the warpage in thesubstrates 211 and 213 can be known based on the results of measuringthe substrates 211 and 213 without warpage in the same condition.Therefore, the warpage amount of the substrates 211 and 213 can becalculated by measuring the deflection of the substrates 211 and 213 inwhich the warpages occur and subtracting the difference.

Further, the residual stress of the substrates 211 and 213 which ismeasured with Raman scattering and the like in a state that thesubstrates 211 and 213 is forcibly flattened by attracting them to thesubstrate holder 221 and the like, and this residual stress may beregarded as the information about the warpage of the substrate. Further,the information about the warpages of the substrates 211 and 213 may bemeasured in a preprocessing apparatus such as an exposure apparatus anda film deposition apparatus which are used in the process which is donebefore the stacked substrate manufacturing apparatus 100. Also, themeasurement of the warpages of the substrates 211 and 213 may be donebefore importing the substrates 211 and 213 into the overlaying unit300. For example, in the stacked substrate manufacturing apparatus 100,the prealigner 500 may be provided with a measuring apparatus to measurethe warpages of the substrates 211 and 213.

On the other hand, if the information about the warpages of thesubstrates 211 and 213 is analytically obtained without measuring thewarpages of the substrates 211 and 213, the magnitude, direction, andthe like of the warpages occurring in the substrates 211 and 213 may beestimated based on the information about the structure and material ofthe structural bodies such as the circuit regions 216 fabricated on thesubstrates 211 and 213. Also, the warpage occurring in the substrates211 and 213 may be estimated based on information on the cause of thewarpage, such as information about the treatment process to thesubstrates 211 and 213 occurring in the process of fabricating theabove-described structural body i.e. the thermal history involved infilm deposition and the like, and a chemical process such as etching.

Also, when warpages occurring on the substrates 211 and 213 areestimated, peripheral information such as the front surface structure ofthe substrates 211 and 213, a membrane thickness of the film stacked onthe substrate 210, and a tendency, variation, film deposition procedure,condition of the film deposition apparatus such as a CVD apparatus usedfor film deposition, which may cause the warpages occurring in thesubstrates 211 and 213, may be referred as well. These pieces ofperipheral information may be measured again in order to estimate thewarpages.

Further, in order to estimate the warpages of the substrates 211 and 213as described above, the previous data and the like may be referred whenthe equivalent substrates were treated, or data of the relationshipbetween the warpage amount and the magnification ratio, the relationshipbetween the difference in warpage amount and the magnification ratiodifference, or the combination of the warpage amounts in which thedifference in magnification ratio i.e. the amount of misalignment isequal to or less than the threshold may be prepared in advance byexperimenting the process assumed for the substrate equivalent to thesubstrates 211 and 213 to be overlaid. Further, the data may be preparedby analytically obtaining the warpage amount with finite elementtechnique and the like based on the film deposition structure and thefilm deposition condition of the substrates 211 and 213 to be overlaid.

It is noted that the measurement of the distortion amounts in thesubstrates 211 and 213 may be performed outside the stacked substratemanufacturing apparatus 100, or an apparatus to measure the distortionin the substrates 211 and 213 may be incorporated within the stackedsubstrate manufacturing apparatus 100 or a system including the stackedsubstrate manufacturing apparatus 100. Further, measurement items can beincreased in conjunction with internal and external measuring apparatus.

Then, the controlling unit 150 selects any one of first substrate 213from a plurality of substrates 210 from which information about thecurving was obtained in the step S201 (step S202) and calculates eachmagnification ratio which is finally remained when the selected firstsubstrate 213 and the tentatively combined second substrate 211 areoverlaid (step S203). In the subsequent description, the finallyremained magnification ratio in the two substrates 211 and 213 isreferred to as the final magnification ratio. Further, the controllingunit 150 determines whether or not the tentative combination of thefirst substrate 213 and the second substrate 211 described abovesatisfies the condition predetermined for the stacked substrate 230 bycomparing the difference in calculated final magnification ratio to thepredetermined threshold (step S204).

It is noted that, in this implementation, the predetermined conditionis, for example, a threshold corresponding to the maximum deviationamount which allows electrical conduction between the substrates 211 and213 after the substrates 211 and 213 are bonded to each other, and ifeach of the substrates 211 and 213 is provided with structural bodiessuch as connection portions, the predetermined condition is a valuecorresponding to the amount of misalignment between the substrates 211and 213 which occurs when the structural bodies at least partiallycontact with each other. The threshold is, for example, equal to or lessthan 1.0 μm, and more preferably, equal to or less than 0.5 μm. If theamount of misalignment is larger than the threshold, the connectionportions do not contact with each other or appropriate electricalconduction cannot be obtained, or the predetermined joining strengthcannot be obtained between the joining portions. The threshold can beset depending on the amount of the correction done by the correctingunit such as the substrate holder and the correction mechanism fordistortion correction described below.

If the controlling unit 150 determines that the tentative combination ofthe substrates 211 and 213 satisfies the predetermined condition in stepS204 (step S204: YES), the controlling unit 150 causes the bondingprocess following step S102 (FIG. 3 ) to be performed on thiscombination of the substrates 211 and 213. On the other hand, if it isdetermined that the combination of the substrates 211 and 213 does notsatisfy the predetermined condition in step S204 (step S204: NO), thecontrolling unit 150 does not perform the bonding of the tentativecombination of the substrates 211 and 213, but perform a countermeasureso that these substrates 211 and 213 can satisfy the condition (stepS205).

FIG. 15 is a flow diagram describing one of the countermeasures to beperformed in the step S205 described above. The controlling unit 150first determines one first substrate 213 on which the countermeasurewill be performed (step S301). Next, the controlling unit 150 obtainsthe information about the curving measured in step S201 (FIG. 14 ) forthe selected first substrate 213 (step S302).

Then, the controlling unit 150 calculates the range of allowedmagnification ratios for the second substrate 211 which can be combinedwith the first substrate 213, i.e. the range of magnification ratiosfinally occurring in the second substrate 211 as a result of bonding tothe first substrate 213, based on the information obtained for theselected first substrate 213 and the value of difference of the finalmagnification ratio satisfying the predetermined condition when thestacked substrate 230 is formed by bonding the first substrate 213.Here, the controlling unit 150 calculates the magnification ratio thatcan offset the joining process magnification ratio occurring in thefirst substrate 213 in the process of overlaying and specifies the rangeof values around the value as the allowable range, for example.

Then, the second substrate 211 having a distortion state such as warpagecorresponding to the magnification ratio within the range is selectedamong the plurality of substrates for which the information aboutcurving has already been obtained in step S201 (FIG. 14 ) and iscombined with the first substrate 213 (step S303). Here, the controllingunit 150 estimates the final magnification ratio of the second substrate211 based on the information about curving such as warpage, anddetermines the second substrate whose final magnification ratio iswithin the range described above (step S303). In this way, thecombinations of the substrates which can be bonded to form the stackedsubstrate 230 satisfying a predetermined condition are formed.

In step S303 described above, if the substrates 211 and 213 are overlaidwhile each of them is flat, it is preferable to combine the firstsubstrate 213 and the second substrate 211 in such a manner that thedifference in magnification ratio during the retention to the substrateholders 221 and 213, i.e. the difference in sum of the initialmagnification ratio and the flattening magnification ratio between thesubstrates 211 and 213, is small. The magnification ratios of thesubstrates 211 and 213 which are retained in the substrate holders 223and 221 can also be calculated based on the information about thewarpage, or estimated from a relationship between the warpage amount andthe magnification ratio.

In step S303, when the first substrate 213 retained in the substrateholder 223 having a convex retaining surface and the second substrate211 retained in the substrate holder 221 having a flat retaining surfaceare overlaid by releasing the retention of the first substrate 213, asecond substrate 211 is combined which makes a difference between (i)the magnification ratio during retention to the substrate holder 221having a flat retaining surface, i.e. the sum of the initialmagnification ratio and the flattening magnification ratio, and (ii) thesum of the initial magnification ratio and the joining processmagnification ratio which is the final magnification ratio of the firstsubstrate 213 equal to or less than the threshold. In this case, therelationship between the final magnification ratio and the warpage stateof the substrate in the substrates 211 and 213 may be obtained throughan experiment in advance.

Also, the magnification ratio of the second substrate 211 which isretained on the substrate holder 221 and the final magnification ratioof the first substrate 213 can be calculated based on information aboutthe curving or the relationship between the warpage amount and themagnification ratio.

In this way, a misalignment due to the difference in magnification ratiocan be prevented or suppressed by estimating, in the step of determiningthe combination of the substrates 211 and 213, the magnification ratiosin the step of overlaying the substrates 211 and 213 or the finalmagnification ratios after the overlaying, based on a distortion such asa warpage of the substrates 211 and 213. Also, a joining failure due toa difference in magnification ratio is prevented by combining thesubstrates 210 which make a difference in magnification ratio in thestep of overlaying equal to or less than the threshold.

Also, the misalignment can be at least reduced by combining thesubstrates 210 with a small difference in magnification ratio in thestep of overlaying, and furthermore, a misalignment can be eliminatedwith a small correction even when the substrates 210 are corrected inany manner as described below. Further, an alignment in the overlayingunit 300 can be accelerated and the throughput of the stacked substratemanufacturing apparatus 100 can be improved by suppressing thedifference in magnification ratio by determining the combination of thesubstrates before the step of aligning in the overlaying unit 300 orbefore the detection of alignment marks.

It is noted that while the determination of the combination based on theinformation about the curving of the substrate 210 is preferably priorto the step of overlaying the substrates 211 and 213 (step S103 shown inFIG. 3 ) as described above, and is also preferably prior to theactivation of the front surfaces of the substrates 211 and 213 to beoverlaid (step S106 shown in FIG. 3 ). Thus, an unnecessary activationof the substrates 211 and 213 can be avoided when the combination of thesubstrates to be overlaid cannot be determined despite having activatedthe substrates 211 and 213.

In the implementation described above, if a combination with themagnification ratio difference within the allowable range cannot bedetermined for the substrates 210 in one lot or cassette, a range ofcandidates for combination may be expanded to other lots or othersubstrate cassettes 120. In this case, a cassette may be provided toaccommodate the substrates 210 for which a combination cannot bedetermined, and which wait in the cassette until substrates 210 to becombined are found.

In the implementation described above, the combination of the firstsubstrate 213 and second substrate 211 is determined based on the amountof misalignment, magnification ratio, and the like which are estimatedfrom the information about the curving of the first substrate 213 andthe second substrate 211. Alternatively, the combination may bedetermined based on a distortion state such as a distortion type and adistortion amount of the first substrate 213, and the distortion stateof the second substrate 211. The distortion state is part of theinformation about a curving and includes warpage states such as awarpage shape and a warpage amount. In this case, the condition to besatisfied for the combination includes such a condition that thecombination of the distortion state of the first substrate 213 and thedistortion state of the second substrate 211 corresponds to thepredetermined combination of the distortion state. In this way, thecombination can be determined based on a shape such as a distortionstate in the first substrate 213 and the second substrate 211.

Also, in the implementation described above, the combination of thesubstrates 211 and 213 may be determined in consideration of a localwarpage of the substrates 211 and 213. A warpage state in the warpageregion of the substrates 211 and 213 can be measured and estimated in asimilar way to the global warpage described above, and also, informationabout local warpage can be associated with distortion. In this case,substrates are combined in such a manner that the warpage states of thetwo opposing substrates 211 and 213 are in a mirror image relationshipabout the plane along the front surfaces of the two substrates 211 and213. When these two combined substrates 211 and 213 are joined, it ispreferable to release the both substrates 211 and 213 from the substrateholders 221 and 213. In this way, since equivalent distortions can begenerated in the locally warped regions of both of the substrates 211and 213, the misalignment due to the difference in distortion in thelocal warpage regions is suppressed.

At first, substrates 210 provided for overlaying randomly has variouswarpage states as shown in the left side in the figure of FIG. 16 .Therefore, once the controlling unit 150 in the stacked substratemanufacturing apparatus 100 obtains information about the curving ofeach of the substrates 210 in step S201, it obtains the informationabout the curving of the substrates 210 included in one lot or thesubstrate cassette 120 based on the obtained information, and thenorganizes the substrates 210 according to the magnitude of warpage.

Here, the controlling unit 150 processes he arrangement of thesubstrates 210 and associates the codes identifying the substrates 210with the accommodated positions in the substrate cassette 120, withoutmoving the substrates 210, in such a manner that a plurality ofsubstrates 210, for example, accommodated in one substrate cassette 120may be ordered. In this way, sequentially overlaying and combining theplurality of ordered substrates 210 makes the magnification ratiodifference uniform in the cassette or the lot, which makes it possibleto manufacture the generally high quality stacked substrates 230.

On the other hand, a pair of the substrates 210 with the misalignmentequal to or less than the threshold is accommodated side-by-side in thesubstrate cassette 120 by means of a sorter and the like so that thecontrolling unit 150 in the stacked substrate manufacturing apparatus100 can select the appropriate combinations and perform bonding bysimply processing the substrates 210 in the substrate cassette 120 in asequential order. Thus, the load on the controlling unit 150 is reduced,and the throughput can be improved.

Also, as described below, instead of determining the combination of thesubstrates 210 in the stacked substrate manufacturing apparatus 100, thecombination may be determined by an apparatus other than the stackedsubstrate manufacturing apparatus 100.

In this case, the apparatus other than the stacked substratemanufacturing apparatus 100 measures shapes including the warpage of thesubstrate 210. The other apparatus includes a substrate processingapparatus which processes the substrates 210 to be joined in a stepbefore the joining, for example, an exposure apparatus, a filmdeposition apparatus, a polishing apparatus, and the like.

Based on this information about the shape of the distorted substrate210, the plurality of substrates 210 are sorted to individual substratecassettes 120 according to, for example, the warpage amounts.Alternatively, the identification information which identifies eachsubstrate 210 and the information about the curving of each substrate210 are associated and stored within one substrate cassette 120. Thissorting may be done by using a sorter. If the sorting is done in thesame lot, the substrates 210 do not have to be relocated from thecassette in which they are originally accommodated to a dedicatedsubstrate cassette. On the other hand, if they are sorted across thelots, they may be relocated to a dedicated substrate cassette, or aplurality of substrate cassettes may be arranged and installed in thestacked substrate manufacturing apparatus.

The controlling unit in the substrate processing apparatus reads data inwhich a plurality of substrates 210 and the information about thecurving are associated from a data server storing the data anddetermines the combination, or outputs an indication signal forperforming a combination to the combination processing unit whichdetermines the combination for the processing. The controlling unit inthe substrate processing apparatus outputs to the stacked substratemanufacturing apparatus 100 a signal which indicates an instruction tojoin a pair of the combined substrates 210. Based on the signal receivedfrom the controlling unit in the substrate processing apparatus, thestacked substrate manufacturing apparatus 100 joins the substrateswithin the installed substrate cassette according to the instructionfrom the controlling unit in the substrate processing apparatus.

FIG. 17 shows a flow diagram describing one of the procedures in thecountermeasure performed in step S205 (FIG. 14 ). First, the controllingunit 150 selects any combination of a first substrate 213 and a secondsubstrate 211 from a group of substrates 210 whose information about thecurving of the substrates is collected (step S401). In other words, thecontrolling unit 150 serves as a selecting unit which selects acombination of the first substrate 213 and the second substrate 211which satisfies a predetermined condition from a plurality of substrates210. However, the selected combination in the step S401 is a combinationwhich has already been determined not to satisfy the condition in stepS204 (FIG. 14 ).

Next, the controlling unit 150 obtains the information about the curvingmeasured in step S201 (FIG. 14 ) for the selected pair of substrates 211and 213 (step S402). Thus, the controlling unit 150 can learn thedeviation of the final magnification ratio in this combination of thefirst substrate 213 and the second substrate 211 from a given condition,and calculate the amount of the correction which should be performed forthe condition to be satisfied. In other words, the controlling unit 150serves as an estimating unit which estimates the amount of misalignmentbetween the two substrates 211 and 213 which occurs when they arebonded. Here, the correction amount refers to the distortion amount tobe generated on at least one of the two substrates 210 in such a mannerthat the misalignment between the two substrates 211 and 213 joined witheach other becomes equal to or less than the threshold.

Therefore, the estimated magnification ratio is changed by changing thedistortion state of at least one of the substrates 211 and 213 by thesubstrate holder 223, a correcting unit 602 described below, and thelike (step S403) so that the final magnification ratio of the selectedfirst substrate 213 approaches the magnification ratio of the designspecification.

It is noted that the distortion amount of the substrates 211 and 213 maybe changed by changing the shapes of at least one of the substrates 211and 213 while the substrates 211 and 213 are not overlaid. Also, whilethe shape of each of the substrates 211 and 213 may be changed inaccordance with the design specification, the shape of one of thesubstrates 211 and 213 to be stacked may be changed in such a mannerthat the one of the substrates 211 and 213 matches the other. Also, thenonlinear distortion and the like of the substrate recorded as theinformation about the substrates 211 and 213 described above may becorrected as well.

Further, the controlling unit 150 may calculate an initial magnificationratio corresponding to the magnification ratio occurring in the processof overlaying such as a joining process magnification ratio anddetermine the second substrate 211 having a magnification ratio whosedifference from the calculated initial magnification ratio is equal toor less than the threshold.

Still further, the controlling unit 150 corrects the determinedmagnification ratio of the second substrate 211 by the correcting unit601, 602, 603, and the like, to ensure that the magnification ratiodifference between the substrates 211 and 213 which occurs following theoverlaying is equal to or less than the threshold. Thus, themagnification ratio difference between the substrates 211 and 213 in thestacked substrate 230 can be significantly reduced.

It is noted that if it is found that the predetermined condition cannotbe satisfied by correcting either of the substrates 211 and 213 in stepS403, the combination of the substrates 211 and 213 may be changedaccording to the procedure shown in FIG. 14 . Also, the substrates 211and 213 for which a combination is not still found may be removed fromthe process, and be ready until a substrate which can be combinedemerges.

Further, in the example described above, the substrates 211 and 213 areprocessed on condition that the substrates 211 and 213 to be bondedsatisfy the initial condition. However, for example, in a step to selectanother substrate 211 after a combination of the substrates 211 and 213which cannot satisfy the condition occurs, the condition may be relaxedby adding another predetermined value to the initial threshold. Thus,the decrease in the precision is suppressed within the range which isassumed in advance, and also the yields of the substrates 211 and 213can be improved.

FIG. 18 is a figure to describe a method of correcting the initialmagnification ratio of the substrate 210, as one of the methods tocorrect the distortion of the substrate 210 in step S403 (FIG. 16 ).This figure shows the state in which the substrate 211 is retained onthe substrate holder 221.

Here, the substrate holder 221 has a sectional shape whose thicknessgradually increases from the circumferential portion toward the centerportion. Thus, it has a curved retaining surface 225. The substrate 211which attracts to and is retained on the substrate holder 221 closelyattaches to the retaining surface 225 and curving along the shape of theretaining surface 225. Therefore, if the front surface of the retainingsurface is a curved surface, for example, a cylindrical surface, aspherical surface, a paraboloid surface, and the like, the shape of theattracted substrate 213 also changes to form such a curved surface.

If the substrate 211 is attracted to the retaining surface 225 with sucha shape, in a state in which the substrate 211 is curved, in comparisonto the center portion A in the thickness direction of the substrate 213which is indicated with a one dot chain line in the figure, on the frontsurface which is the upper surface of the substrate 211 in the figure,the shape changes in such a manner that the front surface of thesubstrate 211 spreads in the surface direction from the center towardthe circumferential portion. Also, on the back surface which is thelower surface of the substrate 211 in the figure, the shape changes insuch a manner that the front surface of the substrate 211 reduces in thesurface direction from the center to the circumferential portion.

In this way, when the substrate 211 is retained to the substrate holder221, the front surface of the substrate 211 on the upper side in thefigure is enlarged relative to the substrate 211 in the flat state.These changes in shape can correct the misalignment due to themagnification ratio difference from the other substrate 213. It is notedthat the correction amount for the magnification ratio can be adjustedby preparing a plurality of substrate holders 221 with variouscurvatures of the curved retaining surface 225.

FIG. 19 is a schematic cross sectional view of the correcting unit 601,as an example of the curving unit, which can be incorporated into theoverlaying unit 300. In the illustrated example, the correcting unit 601is provided on the lower stage 332 of the overlaying unit 300, and usedfor the case in which the shape of the substrate 211 is changed to becurved for correction in step S403 described above (see FIG. 17 ).

The correcting unit 601 includes a base 411, a plurality of actuators412, and an attracting unit 413. The base 411 supports the attractingunit 413 through the actuators 412.

The attracting unit 413 has an attracting mechanism such as vacuum chuckand electrostatic chuck, and forms an upper surface of the lower stage332. The attracting unit 413 attracts to and retains the importedsubstrate holder 221.

The plurality of actuators 412 are placed below the attracting unit 413along the lower surface of the attracting unit 413. Also, the pluralityof actuators 412 are driven individually by the working fluid providedthrough a pump 415 and a valve 416 from the outside under control of thecontrolling unit 150. Thus, the plurality of actuators 412 individuallyexpands or contracts in the direction of thickness of the lower stage332, i.e. the overlaying direction of the substrates 211 and 213, withthe different expansion and contraction amounts, to raise or lower theregion of the attracting unit 413 to which the plurality of actuators412 is connected.

Also, the plurality of actuators 412 are each connected to theattracting unit 413 via links. The center portion of the attracting unit413 is connected to the base 411 via a support column 414. When theactuators 412 move in the correcting unit 601, the front surface of theattracting unit 413 in the region to which the actuator 412 is connecteddisplaces in the thickness direction.

FIG. 20 is a schematic plan view of the correcting unit 601 and shows alayout of the actuator 412 in the correcting unit 601. In the correctingunit 601, the actuators 412 are placed radially around the supportcolumn 414. The arrangement of the actuators 412 can also be regarded asconcentric with the support column 414 as the center. The arrangement ofthe actuators 412 is not limited to the illustrated ones, but thearrangement in, for example, a grate or spiral manner or the like isalso possible. Thus, the substrate 211 can also be corrected by changingthe shape in concentric, radial, spiral manners and the like.

FIG. 21 describes an operation of the correcting unit 601. Asillustrated, the shape of the attracting unit 413 can be changed byindividually opening and closing the valves 416 to expand and contractthe actuators 412. Therefore, if the substrate holder 221 attracts tothe attracting unit 413 and the substrate holder 221 retains thesubstrate 211, the shapes of the substrate holder 221 and the substrate211 can be changed to be curved by changing the shape of the attractingunit 413.

As shown in FIG. 20 , the actuators 412 can be regarded as beingarranged in a concentric manner, or in the circumferential direction ofthe lower stage 332. Thus, as indicated by the dotted line M in FIG. 20, by grouping the actuators 412 at the same distance from the centertogether and increasing the driving amounts toward the circumferentialedge, the center area of the front surface of the attracting unit 413 israised in such a manner that the shape of the front surface of theattracting unit 413 can be changed into a spherical surface, aparaboloid surface, a cylindrical surface, and the like.

Thus, the shape of the substrate 211 can be changed to be curved along aspherical surface, paraboloid surface, and the like, as in the case thatthe substrate 211 is retained on the curved substrate holder 221.Therefore, the correcting unit 601 changes the shape in such a mannerthat, in the upper side of the substrate 211 in the figure, the frontsurface of the substrate 211 spread in the surface direction relative tothe center portion B in the thickness direction of the substrate 213,indicated with the one dot chain line in the figure. Also, in the lowerside of the substrate 211 in the figure, the shape is changed in such amanner that the front surface of the substrate 211 contracts in thesurface direction. Further, a nonlinear distortion can also be correctedby curving and changing the shape of the substrate 211 to the othershapes such as cylindrical surface, or a shape including a plurality ofbumps and indentations by individually controlling the expansion andcontraction amount of a plurality of actuators 412.

Therefore, the deviation from the design specification of the circuitregion 216 in the front surface of the substrate 211 can be entirely orpartially adjusted by individually operating the actuators 412 of thecorrecting unit 601 through the controlling unit 150. Also, the changeamount of the shape can be adjusted by changing the moving amounts ofthe actuators 412.

In the example described above, the attracting unit 413 has a shapewhose center is raised. However, the magnification ratio of the circuitregion 216 on the front surface of the substrate 211 can also be reducedby increasing the moving amounts of the actuators 412 in thecircumferential portion of the attracting unit 413 for depressing thecenter portion of the attracting unit 413 relative to thecircumferential portion.

Also, in the example described above, the correcting unit 601 isincorporated into the lower stage 332 of the overlaying unit 300, butthe correcting unit 601 may be incorporated into the upper stage 322 andthe substrate 213 may be corrected on the upper stage 322. Stillfurther, the correcting unit 601 may be incorporated into both the upperstage 322 and the lower stage 332. Further, the correction may be sharedby the upper stage 322 and the lower stage 332. The correction of themagnification ratios of the substrates 211 and 213 is not limited to themethod described above and other correction method may be furtherintroduced such as heat expansion or heat contraction throughtemperature adjustment.

FIG. 22 is a figure to describe a method of correcting the joiningprocess magnification ratio of the substrate 210, as one of the methodsto correct the distortion of the substrate 210 in step S403 (FIG. 16 ).The substrate 211 in the lower side in the figure is retained on thesubstrate holder 221 with the raised center so that the magnificationratio is increased. Here, the corrected magnification ratio of thesubstrate 211 takes the joining process magnification ratio of thesubstrate 213 into account. Therefore, the deviation due to thedifference in magnification ratio between the substrates 211 and 213 isreduced.

The retaining surface 225 of the substrate holder 221 has a shape withthe raised center. However, by preparing the substrate holder 223 withthe depressed center portion relative to the circumferential portion ofthe retaining surface 225 to retain the substrate 211, the magnificationratio in the front surface of the substrate 211 can be reduced and themisalignment relative to the design specification of the circuit region216 can be adjusted.

FIG. 23 shows a schematic cross sectional view of another correctingunit 602 which can be incorporated in the overlaying unit 300 andcorrect the joining process magnification ratio of the substrates 211and 213. The correcting unit 602 is incorporated into the substrateholders 221 and 223 used in the overlaying unit 300. This correctingunit 602 can be used together with the substrate holder 221 with thecurved retaining surface 225, the correcting unit 601 described above,and the like. Also, the correcting unit 602 can be used together withthe electrostatic chuck used when the substrate 211 attracts to thesubstrate holder 221.

The correcting unit 602 includes switches 434, electrostatic chucks 436,and a voltage source 432. The electrostatic chucks 436 are embedded inthe substrate holders 221 and 223. Each of the electrostatic chucks 436is connected to the common voltage source 432 via individual switch 434.Thus, when the switches 434, which open and close under the control ofthe controlling unit 150, closes, the electrostatic chucks 436 generateattracting force on the front surface of the substrate holders 221 and223, with which the substrates 211 and 213 are attracted.

The electrostatic chucks 436 in the correcting unit 602 are distributedacross the entire retaining surface, in the substrate holders 221 and223, which retains the substrate 213. Thus, each of the substrateholders 221 and 223 has a plurality of attracting regions. Therefore,when any one of the switches 434 is closed, the correspondingelectrostatic chuck 436 generates attracting forces, and applies theattracting forces to the substrates 211 and 213 at any position in theretaining surface of the substrate holder 223. It is noted that when allthe switches 434 are closed, all the electrostatic chucks 436 generateattracting forces and securely retain the substrates 211 and 213 to thesubstrate holders 221 and 223.

FIG. 24 describes a correction operation of the correcting unit 602.FIG. 24 shows a part of the substrates 211 and 213 in the process ofoverlaying in a similar manner to FIG. 22 .

In the process of overlaying, when an attracting force is applied to thesubstrate 213 in the region near the boundary K, in which a change inthe shape of the substrate 213 occurs, from above in the figure by thecorrecting unit 602, more significant change in the shape occurs in thesubstrate 213 than when the correction is not performed. Thus, acorrection can be done to increase the expansion amount of the substrate213 in the region on which the electrostatic chuck 436 is activated.

Also, in the overlaying process, the lower substrate 211 rises up fromthe substrate holder 221 and curving due to the pulling force from theupper substrate 213 in the region where the retention of the substrate211 to the substrate holder 221 is partially released. Thus, since theshape of the lower substrate 211 changes in such a manner that the frontsurface expands, the difference in expansion amount from the frontsurface of the upper substrate 213 is reduced by this expansion amount.Therefore, the misalignment due to the magnification ratio differencebetween the substrates 211 and 213 can be reduced by adjusting thecurving amount, i.e. the expansion amount of the substrate 211.

It is noted that if the retention of the substrate 211 is released fromthe lower stage 332 for correction, the retaining force may merely bereduced, instead of being eliminated completely. In this way, byadjusting the retaining force of the substrate 211 to the substrateholder 221, the magnification ratio of the substrate 211 can also beadjusted so that the misalignment due to the magnification ratiodifference from the substrate 213 can be corrected.

In this way, the operation of the correcting unit 602 can suppress themutual difference in magnification ratio between the substrates 211 and213. Also, the electrostatic chucks 436 distributed across the entiresubstrate holders 221 and 223 can individually generate or shut off theattracting force. Therefore, the correcting unit 602 can make correctiondespite of the intricately distributed non-uniform expansion amounts inthe substrates 211 and 213.

It is noted that in the example described above, the substrates 211 and213 are overlaid by releasing the substrate 213 retained on the upperstage 322 all at once toward the substrate 211 retained on the lowerstage 332 for the autonomous joining of the substrate 213. However, thespread of the contact region between the substrates 211 and 213 i.e. themoving speed, moving time, moving direction, and the like of theboundary K may be controlled by sequentially eliminating the attractingforces of the electrostatic chucks 436 from the center portion of thesubstrate toward the outer portion in the surface direction of the upperstage 322 to suppress the autonomous joining of the substrate 213. Thiscan suppress the increase in the magnification ratio difference towardthe perimeter, which is caused by the accumulation of the change in themagnification ratio toward the perimeter.

FIG. 25 shows a schematic cross sectional view of another correctingunit 603 which can be incorporated in the overlaying unit 300 andcorrect the joining process magnification ratio of the substrates 211and 213. The correcting unit 603 is incorporated into the substrateholder 223 used in the upper stage 322 in the overlaying unit 300.

The correcting unit 603 is provided on the substrate holder 223 andincludes a plurality of openings 426 which open toward the substrate 213retained on the substrate holder 223. One end of each of the openings426 is communicated to the pressure source 422 through the upper stage322 and via the valve 424. The pressure source 422 is, for example,pressurized fluid such as compressed dry air. The valves 424individually open or close under control of the controlling unit 150. Ifthe valve 424 opens, pressurized fluid is sprayed from the correspondingopening 426.

FIG. 26 shows the layout of the openings 426 in the correcting unit 603.The openings 426 are placed on the entire retaining surface retainingthe substrate 213 to the substrate holder 223. Therefore, by opening anyof the valves 424, pressurized fluid can be sprayed downward in thefigure at any positions in the retaining surface of the substrate holder223.

The substrate holder 223 retains the substrate 213 with, for example,the electrostatic chuck. The electrostatic chuck can eliminate theattracting force by interrupting the power supply, but there is a timelag until the substrate 213 retained on the residual charge and the likeis released. However, the substrate 213 can immediately be released byspraying pressurized fluid from the openings 426 placed on the entiresubstrate holder 223 immediately after the power feeding to theelectrostatic chucks is interrupted.

FIG. 27 is a schematic view showing the correction operation of thecorrecting unit 603. FIG. 27 shows a part of the substrates 211 and 213in the process of overlaying in a similar manner to FIG. 24 .

In the process of overlaying, once the correcting unit 603 sprays apressurized fluid 427 from above in the figure to the region near theboundary K in which the shape of the substrate 213 changes, thesubstrate 213 is pressed against the other substrate 211 and the changeamount of the shape decreases. Thus, a correction can be done to reducethe expansion amount of the substrate 213 in the region on which thepressurized fluid is sprayed.

In this way, since the correcting unit 603 can operate to suppress theexpansion in the substrate 213, the misalignment due to themagnification ratio difference between the substrates 211 and 213 can becorrected. It is noted that the openings 426 can individually spray thepressurized fluid in the correcting unit 603. Therefore, even if thedistribution of the expansion amounts of the substrate 213 to becorrected is non-uniform, the correction can be performed with differentcorrection amount for each region in the substrate 213.

It is noted that the example described above describes the case in whichthe correcting unit 603 is provided on the upper stage 322. However, inthe overlaying unit 300 with the structure in which the substrate 211retained on the lower stage 332 is released and bonded to the substrate213, the correcting unit 603 may be provided on the lower stage 332 andthe expansion amount of the substrate 211 in the lower side in thefigure may be corrected. Further, the correcting units 603 may beprovided on both of the lower stage 332 and the upper stage 322, and thecorrections may be performed on both of the substrates 211 and 213.

Also, in addition to suppressing the magnification ratio difference bycombining the substrates 211 and 213 as described in reference to FIG.15 , the magnification ratio correction using the substrate holder 221having the retaining surface 225 with the curved surface shown in FIG.18 , and the magnification ratio correction using the correcting unit601 shown in FIG. 19 and the like, the correcting unit 602 shown in FIG.23 , the correcting unit 603 shown in FIG. 25 and the like, and the likemay be used together.

In this case, in the step of determining the combination of the twosubstrates 211 and 213 which meets the predetermined condition, acombination is determined in which the amount of misalignment betweenthe two substrates 211 and 213 has such a magnitude that can becorrected with the correcting methods and units described above. Inother words, a combination of substrates 211 and 213 is determined inwhich the difference between the amount of misalignment of thesubstrates 211 and 213 and the threshold of the amount of misalignment,i.e. the needed amount of the correction, is smaller than the maximumamount of the correction of the correcting methods and units describedabove.

This can suppress the misalignment due to the distortion differencewhich could not be eliminated when determining the second substrate 211in accordance with the first substrate 213 based on the informationabout the curving. Therefore, the number of the combinations can beincreased using the correcting methods and units even if the combinationin which the amount of misalignment is equal to or less than thethreshold cannot be determined.

It is noted that the amount of the correction by the substrate holder221 can be adjusted, since the projecting amount of the substrate holder221 can be continuously changed by using the correction mechanism havingthe actuator 412 and the like to change the shape of the substrateholder 221 having the curved retaining surface 225. Also, the correctionamount for the warpage, distortion, and the like of the substrates 211and 213 can be adjusted with the correction mechanism which utilizes atemperatures difference between the substrates 211 and 213, attractingforces to the substrates 211 and 213, and the like. Thus, the correctionrange is expanded and the utilization efficiency of the substrate 210can be further improved.

Also, when the misalignment between the substrates is corrected with thecorrection mechanism based on the information about the curving of thesubstrate as in the example described above, the information obtained bythe obtaining unit may be the information such as a correction method ora correction amount for correcting distortions. Further, informationobtained by the obtaining unit may be information for calculating acorrection amount, other than a correction amount. Here, the examples ofinformation other than the correction amount include, for example, thelot number of the substrate 210, the ID of the equipment used forprocessing the substrate 210 in the pre-process, the history of theprocess done for the substrate 210 until overlaying, the specificationof the substrate 210, and the like.

Also, when the misalignment is corrected using the correcting methodsand units described above in the procedure shown in FIG. 17 , thepredetermined condition in S404 of FIG. 17 may be whether or not theamount of misalignment between the two substrates 211 and 213 calculatedor estimated from information about the curving of the two substrates211 and 213 or the difference between the amount of misalignment and thethreshold of the amount of misalignment, i.e. the needed correctionamount is equal to or less than the magnitude which can be correctedwith the correcting methods and units described above. If this conditionis satisfied, the correction is done with the correcting methods andunits described above, or if the condition is not satisfied, thecombination of substrates which satisfies the condition is determinedaccording to the steps shown in FIG. 15 .

In this way, the substrates 211 and 213 which are suited for stackingcan be combined by obtaining information about the curving of thesubstrates 211 and 213 in advance and estimating the distortion or themisalignment including the magnification ratio which occurs after theoverlaying. Thus, the stacked substrates 230 in which the misalignmentdue to the magnification ratio and the like is equal to or less than thethreshold can be manufactured efficiently. Also, even if the substrates211 and 213 to be overlaid have a difference in magnification ratio andthe like, a correction to suppress the magnification ratio differencecan be performed efficiently, and the productivity and the yield of thestacked substrate 230 with a small misalignment can be improved.

Alternatively, in the implementation described above, a differencebetween the magnification ratio estimated from information about thecurving of the substrates 211 and 213, and the magnification ratiobefore joining or the magnification ratio after joining measured withthe global alignment or the enhanced global alignment based on thealignment mark 218 on the substrates 211 and 213 is obtained, and thisdifference may be reflected to the threshold and the like for the nextmeasurement and determination if the difference is larger than thepredetermined threshold. Thus, the precision for the alignment of thesubstrates 211 and 213 can be further improved.

In this case, the controlling unit 150 may calculate and record thedistortion state of the substrates 211 and 213, as information about thesubstrates 211 and 213, based on the position information of thealignment marks 218, for each substrates 211 and 213, or, if thecombination of the substrates 211 and 213 to be overlaid has beendetermined, for each combination thereof.

Also, in addition to or as an alternative to the implementationdescribed above which shows the example to determine whether thecombination is appropriate or not based on the state of themagnification ratio distortion which occurred in the substrates 211 and213, alternatively, it is also possible to determine whether thecombination is appropriate or not based on the state of the orthogonaldistortion which occurred in each of the substrates 211 and 213. If anorthogonal distortion occurs in each of the two substrates 211 and 213,one of the substrates are rotated to detect whether or not the amount ofmisalignment between the two substrates 211 and 213 is equal to or lessthan the threshold, and if it is equal to or less than the threshold,the combination may be determined to be appropriate.

FIG. 28 shows a flow diagram to describe another procedure of thecountermeasure performed in step S205 (FIG. 14 ). First, the controllingunit 150 selects any first substrate 213 among a group of substrates 210whose information about the curving is collected (step S501). Note that,the combination selected in the step S501 is the substrate 213 which wastaken out from the combinations determined not to satisfy the conditionin step S204 (FIG. 14 ).

Next, the controlling unit 150 obtains information about the curvingmeasured in step S201 (FIG. 14 ) for the selected first substrate 213(step S502). Thus, the controlling unit 150 can calculate themagnification ratio of the second substrate 211 which satisfies thepredetermined condition when the second substrate 211 is combined tothis first substrate 213. Then, the controlling unit 150 outputsinformation indicating the required specification for the secondsubstrate 211 to the manufacturing equipment of the substrates 211 and213, which manufactures the second substrate 211 which can satisfy thecondition when combined to the selected first substrate 213 to form thestacked substrate 230 (step S503).

Thus, the stacked substrate 230 which surely satisfies the condition canbe fabricated from the first substrate 213 by manufacturing the secondsubstrate 211 which is intended to be combined to the first substrate213. It is noted that in step S503, as an alternative to manufacturingthe second substrate 211 to be combined to the first substrate 213, if asubstrate 210 which is stored in another lot or another line whosecombination cannot be found is suited for the first substrate 213, itmay be used.

Further, if a substrate 210 to be combined cannot be determined, asubstrate 210 having an appropriate magnification ratio for thecombination with the substrate 210 may be fabricated.

For example, the second substrate 211 whose difference in finalmagnification ratio from the existing first substrate 213 is equal to orless than the threshold may be manufactured later. In this case, thewarpage amount of the substrate 211 whose final magnification ratiodifference is equal to or less than the threshold may be calculated, andinformation about the warpage of the first substrate 213 may be fed backto the film deposition apparatus in the process from manufacturing thewafer to manufacturing the substrate 211 including film deposition inorder to intentionally warp the substrate 211.

Thus, the throughput of overlaying the substrates 211 and 213 can beimproved by preparing the substrates which does not cause amagnification ratio difference. In this case, the two substrates 211 and213 may be manufactured with a target value of the warpage amount withwhich the magnification ratio difference between them is zero, and theerror from the target value may be eliminated using a combination of thesubstrates 211 and 213 or a correction mechanism as described above.

Also, as for the substrate manufactured as described above, after thesecond substrate 211 to be combined to the first substrate 213 isdetermined, the substrate whose magnification ratio difference from theremained substrate is equal to or less than the threshold may bemanufactured. Thus, the yield of the substrates 211 and 213 can beimproved.

Also, as an alternative to this implementation which shows the examplefor determining whether or not the combination of first substrate 213and the second substrate 211 satisfies the predetermined condition forthe stacked substrate 230, it is also possible to individually determinewhether or not each of the first substrate 213 and the second substrate211 satisfies the predetermined condition. In this case, an example ofthe predetermined condition is that the distortion amount estimated tobe generated in each of the first substrate 213 and the second substrate211 in the bonding process, from the moment they are imported into thestacked substrate manufacturing apparatus 100 to the completion of thebonding, is equal to or less than the half of the width dimension of theconnection terminal provided on each of the first substrate 213 and thesecond substrate 211. Alternatively, a curved state of each of the firstsubstrate 213 and the second substrate 211 which satisfies thiscondition may be stored in advance, and whether or not the condition issatisfied may be determined from the measured curving states.

While the embodiments of the present invention have been described, thetechnical scope of the invention is not limited to the above describedembodiments. It is apparent to persons skilled in the art that variousalterations and improvements can be added to the above-describedembodiments. It is also apparent from the scope of the claims that theembodiments added with such alterations or improvements can be includedin the technical scope of the invention.

The operations, procedures, steps, and stages of each process performedby an apparatus, system, program, and method shown in the claims,embodiments, or diagrams can be performed in any order as long as theorder is not indicated by “prior to,” “before,” or the like and as longas the output from a previous process is not used in a later process.Even if the process flow is described using phrases such as “first” or“next” in the claims, embodiments, or diagrams, it does not necessarilymean that the process must be performed in this order.

EXPLANATION OF REFERENCES

100 stacked substrate manufacturing apparatus, 110 housing, 120, 130substrate cassette, 140 conveying unit, 150 controlling unit, 210, 211,213 substrate, 212 scribe line, 214 notch, 216 circuit region, 218alignment mark, 220, 221, 222, 223 substrate holder, 225 retainingsurface, 426 opening, 230 stacked substrate, 300 overlaying unit, 310frame, 312 base plate, 316 ceiling plate, 322 upper stage, 324, 334microscope, 326, 336 activation apparatus, 331 X-direction driving unit,332 lower stage, 333 Y-direction driving unit, 338 lift driving unit,400 holder stocker, 411 base, 412 actuator, 413 attracting unit, 414support column, 415 pump, 416, 424 valve, 422 pressure source, 427pressurized fluid, 432 voltage source, 434 switch, 436 electrostaticchuck, 500 prealigner, 601, 603, 602 correcting unit

1-23. (canceled)
 24. A stacked substrate manufacturing method formanufacturing a stacked substrate by bonding a first substrate and asecond substrate, the stacked substrate manufacturing method comprising:obtaining, from a storing unit that stores information about deformationof a plurality of substrates including the first substrate, thedeformation being in a direction intersecting a bonding surface of eachof the plurality of substrates, information about the deformation of thefirst substrate in the direction intersecting the bonding surface of thefirst substrate; and determining, based on the obtained information, abonding condition to bond the first substrate and the second substrate.25. The stacked substrate manufacturing method according to claim 24,wherein the bonding condition includes such a condition that an amountof misalignment between the first substrate and the second substrate isequal to or less than a threshold when the first substrate and thesecond substrate are bonded to each other.
 26. The stacked substratemanufacturing method according to claim 25, wherein the bondingcondition includes a correction amount to correct the misalignment. 27.The stacked substrate manufacturing method according to claim 26,wherein the bonding condition includes a deformation amount to change ashape of at least one of the first substrate and the second substrate.28. The stacked substrate manufacturing method according to claim 24,wherein the bonding condition includes such a condition that (i) anamount of misalignment between the first substrate and the secondsubstrate when the first substrate and the second substrate are bondedto each other or (ii) a difference between the amount of themisalignment and a threshold is within a magnitude that is correctableby a correcting unit configured to correct the misalignment between thefirst substrate and the second substrate.
 29. The stacked substratemanufacturing method according to claim 24, further comprising at leastone of: estimating, based on the information about the deformation, anamount of distortion occurring in the first substrate when the firstsubstrate and the second substrate are bonded to each other, orcalculating, based on the information about the deformation, an amountof misalignment between the first substrate and the second substratewhen the first substrate and the second substrate are bonded to eachother.
 30. The stacked substrate manufacturing method according to claim24, wherein the bonding condition includes a combination of the firstsubstrate and the second substrate to be bonded to each other.
 31. Thestacked substrate manufacturing method according to claim 30, whereinthe bonding condition includes such a condition that a combination of astate of distortion of the first substrate and a state of distortion ofthe second substrate corresponds to a predetermined combination.
 32. Thestacked substrate manufacturing method according to claim 31, furthercomprising: when the combination of the state of the distortion of thefirst substrate and the state of the distortion of the second substratedoes not correspond to the predetermined combination, selecting, from aplurality of other second substrates and instead of the second substratewith which the combination does not correspond to the predeterminedcombination, another second substrate with which the combinationcorresponds to the predetermined combination.
 33. The stacked substratemanufacturing method according to claim 32, wherein the bondingcondition includes a manufacturing condition to manufacture a substratewith which an amount of misalignment between the substrate and the firstsubstrate becomes equal to or less than a threshold when the substrateand the first substrate are bonded to each other.
 34. The stackedsubstrate manufacturing method according to claim 33, furthercomprising: manufacturing the second substrate such that a magnificationratio of the second substrate when bonded to the first substrate becomeswithin a predetermined range relative to a magnification ratio of thefirst substrate.
 35. The stacked substrate manufacturing methodaccording to claim 24, further comprising: measuring a shape of thefirst substrate to obtain the information about the deformation.
 36. Thestacked substrate manufacturing method according to claim 35, whereinthe information about the deformation includes information indicating atleast one of a warpage magnitude, a warpage direction, a deflectionmagnitude, or a deflection direction of the first substrate.
 37. Thestacked substrate manufacturing method according to claim 35, whereinthe information about the deformation includes information about globalcurving obtained from displacements at a plurality of positions in thefirst substrate relative to a center of the first substrate.
 38. Thestacked substrate manufacturing method according to claim 24, whereinthe information about the deformation is estimated based on amanufacturing process of the first substrate.
 39. The stacked substratemanufacturing method according to claim 38, wherein the informationabout the deformation includes at least one of information indicating amanufacturing process of the first substrate, information indicating astress distribution in the first substrate, or information indicating aspecification of a structural body fabricated on the first substrate.40. The stacked substrate manufacturing method according to claim 24,wherein the information about the deformation is obtained by anapparatus other than an apparatus to manufacture the stacked substrateby bonding the first substrate and the second substrate.
 41. The stackedsubstrate manufacturing method according to claim 24, wherein obtainingthe information about the deformation is performed before measuringpositions of the first substrate and the second substrate by anapparatus to manufacture the stacked substrate.
 42. The stackedsubstrate manufacturing method according to claim 24, wherein obtainingthe information about the deformation is performed before importing thefirst substrate and the second substrate into an apparatus tomanufacture the stacked substrate.
 43. The stacked substratemanufacturing method according to claim 24, wherein the bondingcondition includes a control condition for a stacked substratemanufacturing apparatus to bond the first substrate and the secondsubstrate.
 44. The stacked substrate manufacturing method according toclaim 43, wherein the control condition includes a correction conditionto correct an amount of misalignment between the first substrate and thesecond substrate, the misalignment occurring while a contact regioncreated between the first substrate and the second substrate isexpanding.
 45. The stacked substrate manufacturing method according toclaim 24, wherein the information, which is stored in the storing unitand about the deformation of the plurality of substrates in thedirection intersecting the bonding surface, is previously measured usingan external apparatus.
 46. A stacked substrate manufacturing apparatusfor manufacturing a stacked substrate by bonding a first substrate and asecond substrate, the stacked substrate manufacturing apparatuscomprising: an obtaining unit configured to obtain, from a storing unitthat stores information about deformation of a plurality of substratesincluding the first substrate, the deformation being in a directionintersecting a bonding surface of each of the plurality of substrates,information about the deformation of the first substrate in thedirection intersecting the bonding surface of the first substrate; and acontrol unit configured to determine, based on the information obtainedby the obtaining unit, a bonding condition to bond the first substrateand the second substrate.
 47. The stacked substrate manufacturingapparatus according to claim 46, further comprising: a first stageconfigured to hold the first substrate; and a second stage configured tohold the second substrate, wherein the bonding condition includes acontrol condition for the first stage and the second stage.
 48. Thestacked substrate manufacturing apparatus according to claim 47, whereinthe control condition includes a correction condition to correct anamount of misalignment between the first substrate and the secondsubstrate, the misalignment occurring while a contact region createdbetween the first substrate and the second substrate is expanding. 49.The stacked substrate manufacturing apparatus according to claim 46,wherein the information, which is stored in the storing unit and aboutthe deformation of the plurality of substrates in the directionintersecting the bonding surface, is previously measured using anexternal apparatus.